KP655 Datasheet PDF

APPLICATIONS

FEATURES

: - Blocking Capability up to 2800 V - High dV/dt Capability - All Diffused Structure - Amplifying Gate Configuration - Rugged Ceramic Hermetic Package

ELECTRICAL CHARACTERISTICS

AND RATINGS Blocking Parameter Symbol Min Max Typ Unit Conditions Repetitive peak reverse voltage Repetitive peak off-state voltage VRRM VDRM 2800 2800 V Tj = -40 °C to 125 °C V Tj = -40 °C to 125 °C Non repetitive peak reverse voltage VRSM 2900 V Tj = -40 °C to 125 °C Repetitive peak reverse current IRRM 70 mA Tj = Tjmax , V = VRRM Repetitive peak off-state current IDRM 70 mA Tj = Tjmax ,V = VDRM Conducting Parameter Average value of on-state current RMS value of on-state current Surge non repetitive current I square t Peak on-state voltage Threshold voltage On-state slope resistance Holding current Latching current Symbol Min IT(AV) IT(RMS) ITSM I2 t VTM VT(TO) rT IH IL Max 1350 21