YZPST N1600CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 1200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS CASE 5T Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N1600CH04 400 400 500 N1600CH06 600 600 700 N1600CH08 800 800 900 N1600CH10 1000 1000 1100 N1600CH12 1200 1200 1300 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 10 mA 150 mA (3) 500 V/µsec Conducting - on state