YZPST N282CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type N282CH10 N282CH12 N282CH14 N282CH16 N282CH18 N282CH20 VRRM (1) 1000 1200 1400 1600 1800 2000 VDRM (1) 1000 1200 1400 1600 1800 2000 VRSM (1) 1100 1300 1500 1700 1900 2000 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise (4) IRRM / IDRM dV/dt 15 mA 30 mA (3) 200 V/µsec Conducting - on stat