YZPST N350CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type N350CH05 N350CH06 N350CH08 N350CH10 N350CH12 N350CH14 N350CH16 VRRM (1) 500 600 800 1000 1200 1400 1600 VDRM (1) 500 600 800 1000 1200 1400 1600 VRSM (1) 600 720 960 1150 1300 1500 1700 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise (4) IRRM / IDRM dV/dt 15 mA 35 mA (3) 200 V/µsec Conducti