YZPST N620CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 3200 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N620SH24 2400 2400 2500 N620SH26 2600 2600 2700 N620SH28 2800 2800 2900 N620SH30 3000 3000 3100 N620SH32 3200 3200 3300 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 15 mA 75 mA (3) 1000 V/µsec Notes: All ratings are specified fo