YZPST N990CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS CASE 6T Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N990CH06 600 600 700 N990CH08 800 800 900 N990CH10 1000 1000 1100 N990CH12 1200 1200 1300 N990CH14 1400 1400 1500 N990CH16 1600 1600 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 90 mA (3) 500 V/µsec Conducting - on st