YZPST PSTC762
HIGH POWER THYRISTOR
APPLICATIONS
CASE 6TFEATURES
: . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 3000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC762PM PSTC762PN PSTC762L PSTC762LB PSTC762LM PSTC762CP 1600 1800 2000 2200 2600 3000 1600 1800 2000 2200 2600 3000 1700 1900 2100 2300 2700 3100 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 90 mA (3) 500 V/µsec Conducti