YZPST PSTC786
HIGH POWER THYRISTOR
APPLICATIONS
CASE 5TFEATURES
: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC786PB PSTC786PD PSTC786PM PSTC786PN PSTC786L PSTC786LA 1200 1400 1600 1800 2000 2100 1200 1400 1600 1800 2000 2100 1300 1500 1700 1900 2100 2200 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 10 mA 150 mA (3) 1000 V/µsec C