1S100 - Schottky Barrier Rectifier

Features

Guardring for overvoltage protection.
Very small conduction losses.
Extremely fast switching.
High forward surge capability.
High frequency operation.
Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical.

Yangzhou Yangjie

Datasheet Details

Part number	1S100
Manufacturer	Yangzhou Yangjie
File Size	182.24 KB
Description	Schottky Barrier Rectifier
Datasheet	1S100 Datasheet
Additional preview pages of the 1S100 datasheet.

📁 Similar Datasheet

1S100 - Schottky Barrier Rectifiers (Eris)
1S100 - SCHOTTKY BARRIER RECTIFIER (Rectron Semiconductor)
1S10 - 1 AMPERE SCHOTTKY BARRIER RECTIFIERS (Pan Jit International Inc.)
1S1553 - SWITCHING DIODES (Leshan Radio Company)
1S1555 - SWITCHING DIODES (Leshan Radio Company)
1S1585 - Silicon Diode (Toshiba Semiconductor)
1S1586 - Silicon Diode (Toshiba Semiconductor)
1S1587 - Silicon Diode (Toshiba Semiconductor)
1S1588 - Silicon Diode (Toshiba Semiconductor)
1S1829 - Silicon Rectifier (Toshiba Semiconductor)

Other Datasheets by Yangzhou Yangjie

1S150 - Schottky Barrier Rectifier

Full PDF Text Transcription

Click to expand full text

1S20 THRU 1S200 RoHS COMPLIANT Schottky Barrier Rectifier Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.

Published: Aug 14, 2018 |