DGL50N120CTL0D
Features
- High breakdown voltage to 1200V for improved reliability
- Maximum junction temperature 175℃
- Positive temperature coefficient
- Including fast & soft recovery anti-parallel FWD
- High short circuit capability(10us)
Symbol VCE IC
IF VGE VGE
ICM IFpuls Tsc Ptot
Value 1200
85 50
85 50 ±20 ±30 200
200 200 10 500
Unit V A
A V V A A A μs W .21yangjie.
DGL50N120CTL0D Ro HS PLIANT
Operating Junction Temperature
Tj
-40...+175
°C
Storage Temperature
Ts
-55...+150
°C
Soldering Temperature, wave soldering 1.6mm (0.063in.) from case for 10s
°C
Electrical Characteristics of the IGBT（Tj= 25℃unless otherwise specified）：
Parameter
Symbol
Conditions
Static Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
BVCES VGE=0V, IC=250μA
VGE(th) VCE(sat)
ICES
VGE=VCE, IC=1.4m...
