DGL50N120CTL0D Description
DGL50N120CTL0D RoHS PLIANT IGBT Discrete VCE IC 1200 V 50 A VCE(SAT) IC=50A 1.80 V Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current, limited by Tjmax TC= 25°C.
DGL50N120CTL0D Key Features
- High breakdown voltage to 1200V for improved reliability
- Maximum junction temperature 175℃
- Positive temperature coefficient
- Including fast & soft recovery anti-parallel FWD
- High short circuit capability(10us)
- 40...+175
- 55...+150