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DGL50N120CTL0D - IGBT

Key Features

  • High breakdown voltage to 1200V for improved reliability.
  • Maximum junction temperature 175℃.
  • Positive temperature coefficient.
  • Including fast & soft recovery anti-parallel FWD.
  • High short circuit capability(10us) Symbol VCE IC IF VGE VGE ICM IFpuls Tsc Ptot 1 Value 1200 85 50 85 50 ±20 ±30 200 200 200 10 500 Unit V A A V V A A A μs W www.21yangjie. com DGL50N120CTL0D RoHS.

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Datasheet Details

Part number DGL50N120CTL0D
Manufacturer Yangzhou Yangjie
File Size 1.02 MB
Description IGBT
Datasheet download datasheet DGL50N120CTL0D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DGL50N120CTL0D RoHS COMPLIANT IGBT Discrete VCE IC 1200 V 50 A VCE(SAT) IC=50A 1.80 V Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current, limited by Tjmax TC= 25°C TC= 100°C Continuous Gate-Emitter Voltage Transient Gate-Emitter Voltage (tp≤10µs,D<0.010) Turn off Safe Operating Area VCE≤1200V, Tj≤ 150°C Pulsed Collector Current, VGE=15V, tp limited by Tjmax Diode Pulsed Current, tp limited by Tjmax Short Circuit Withstand Time, VGE= 15V, VCC=600V，VCEM≤1200V Power Dissipation , Tj=175°C，Tc=25°C S-M436D Rev.1.