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DGL75N120CTL1J - IGBT

Key Features

  • High breakdown voltage to 1200V for improved reliability.
  • Maximum junction temperature 175℃.
  • Positive temperature coefficient.
  • Including fast & soft recovery anti-parallel FWD.
  • High short circuit capability(10us) Symbol VCE IC IF VGE VGE ICM IFpuls Tsc Ptot 1 Value 1200 150 75 150 75 ±20 ±30 300 300 300 10 555 Unit V A A V V A A A μs W www.21yangjie. com DGL75N120CTL1J RoHS.

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Datasheet Details

Part number DGL75N120CTL1J
Manufacturer Yangzhou Yangjie
File Size 906.14 KB
Description IGBT
Datasheet download datasheet DGL75N120CTL1J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current, limited by Tjmax TC= 25°C TC= 100°C Continuous Gate-Emitter Voltage Transient Gate-Emitter Voltage (tp≤10µs,D<0.010) Turn off Safe Operating Area VCE≤1200V, Tj≤ 150°C Pulsed Collector Current, VGE=15V, tp limited by Tjmax Diode Pulsed Current, tp limited by Tjmax Short Circuit Withstand Time, VGE= 15V, VCC=600V，VCEM≤1200V Power Dissipation , Tj=175°C，Tc=25°C S-M460D Rev.1.0, 10-Oct-23 DGL75N120CTL1J RoHS COMPLIANT IGBT Discrete VCE IC 1200 V 75 A VCE(SAT) IC=75A 1.