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DGL75N120CTL1J Datasheet

Manufacturer: Yangjie Electronic
DGL75N120CTL1J datasheet preview

Datasheet Details

Part number DGL75N120CTL1J
Datasheet DGL75N120CTL1J-YangzhouYangjie.pdf
File Size 906.14 KB
Manufacturer Yangjie Electronic
Description IGBT
DGL75N120CTL1J page 2 DGL75N120CTL1J page 3

DGL75N120CTL1J Overview

Circuit Maximum Ratings Parameter Collector-Emitter Breakdown Voltage DC Collector Current, limited by Tjmax TC= 25°C TC= 100°C Diode Forward Current, limited by Tjmax TC= 25°C TC= 100°C Continuous Gate-Emitter Voltage Transient Gate-Emitter Voltage.

DGL75N120CTL1J Key Features

  • High breakdown voltage to 1200V for improved reliability
  • Maximum junction temperature 175℃
  • Positive temperature coefficient
  • Including fast & soft recovery anti-parallel FWD
  • High short circuit capability(10us)
  • 40...+175
  • 55...+150
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