Datasheet Details
| Part number | YJB150N06BQ |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 529.20 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJB150N06BQ Datasheet
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| Part number | YJB150N06BQ |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 529.20 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJB150N06BQ Datasheet
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Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive applications Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ Total Power Dissipation TC=25℃ TC=100℃ Single Pulse Avala
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