YJD15N10A - N-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Trench Power MV MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Dr
N-Channel Enhancement Mode Field Effect Transistor
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YJD15N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
100V 15A ＜110 mohm ＜120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
100
V
Gate-source Voltage Drain Current Pulsed Drain Current A
TC=25℃ TC=100℃
VGS
±20
V
15
ID
A
10.
YJD15N10A Datasheet
