YJD15N10A - N-Channel Enhancement Mode Field Effect Transistor

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Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Dr

Yangzhou Yangjie

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Part number	YJD15N10A
Manufacturer	Yangzhou Yangjie
File Size	425.70 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJD15N10A Datasheet
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YJD15N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 100V 15A ＜110 mohm ＜120 mohm General Description ● Trench Power MV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ VGS ±20 V 15 ID A 10.

Published: Feb 26, 2019 |