Yangzhou Yangjie YJD15N10A
The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper.| Part No. | YJD15N10A |
|---|---|
| Datasheet | YJD15N10A Download |
| Manufacturer |  Yangzhou Yangjie |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power MV MOSFET technology● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
APPLICATIONS
● DC-DC Converters● Power management functions
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ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage Drain Current Pulsed Drain Current A TC=25℃ TC=100℃ VGS ±20 V 15 ID A 10.5 IDM 60 A Single Pulse Avalanche Energy EAS 9 mJ Total Power Dissipation TC=25℃ TC=100℃ Thermal Resistance Junction-to-Case B PD RθJC 45 W 22.5 W 3.3 ℃/ W Junction and Storage Temperature Range● Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+175 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD15N10A F1 YJD15N10A 2500 2500 25000 13“ reel S-B1130 Rev.2.0,20-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd. YJD15N10A
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ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condit...
