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YJG25GP10A - P-Channel Enhancement Mode Field Effect Transistor

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Split gate trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-s

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Datasheet Details

Part number YJG25GP10A
Manufacturer Yangzhou Yangjie
File Size 1.05 MB
Description P-Channel Enhancement Mode Field Effect Transistor
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YJG25GP10A RoHS COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested -100V -25A ＜48 mohm ＜55 mohm General Description ● Split gate trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -100 Gate-source Voltage Drain Current Tc=25℃ Tc=100℃ VGS ±20 -25 ID -16 Pulsed Drain Current A Avalanche energy B IDM -100 EAS 162 Total Power Dissipation Tc=25℃ Tc=100℃ 72 PD 28.
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