YJG25GP10A Overview
pulse width limited by max. VDD=50V, RG=25Ω, L=0.5mH. junction temperature, using junction-case.
YJG25GP10A Details
| Part number | YJG25GP10A |
|---|---|
| Datasheet | YJG25GP10A-YangzhouYangjie.pdf |
| File Size | 1.05 MB |
| Manufacturer | Yangjie Electronic |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
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