YJG25GP10A - P-Channel Enhancement Mode Field Effect Transistor
Yangzhou Yangjie
General Description
Split gate trench MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDS(ON)
Applications
DC-DC Converters
Power management functions
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-s
N-Channel Enhancement Mode Field Effect Transistor
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YJG25GP10A
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested
-100V -25A ＜48 mohm ＜55 mohm
General Description
● Split gate trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON)
Applications
● DC-DC Converters ● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
-100
Gate-source Voltage Drain Current
Tc=25℃ Tc=100℃
VGS
±20
-25 ID
-16
Pulsed Drain Current A Avalanche energy B
IDM
-100
EAS
162
Total Power Dissipation
Tc=25℃ Tc=100℃
72 PD
28.
YJG25GP10A Datasheet
