Datasheet Details
| Part number | YJG25GP10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 1.05 MB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 YJG25GP10A Datasheet
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| Part number | YJG25GP10A |
|---|---|
| Manufacturer | Yangzhou Yangjie |
| File Size | 1.05 MB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
YJG25GP10A Datasheet
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Split gate trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -100 Gate-source Voltage Drain Current Tc=25℃ Tc=100℃ VGS ±20 -25 ID -16 Pulsed Drain Current A Avalanche energy B IDM -100 EAS 162 Total Power Dissipation Tc=25℃ Tc=10
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