Datasheet Details
| Part number | YJG25GP10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 1.05 MB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG25GP10A-YangzhouYangjie.pdf |
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Overview: YJG25GP10A RoHS PLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.
| Part number | YJG25GP10A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 1.05 MB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG25GP10A-YangzhouYangjie.pdf |
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● Split gate trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -100 Gate-source Voltage Drain Current Tc=25℃ Tc=100℃ VGS ±20 -25 ID -16 Pulsed Drain Current A Avalanche energy B IDM -100 EAS 162 Total Power Dissipation Tc=25℃ Tc=100℃ 72 PD 28.8 Junction and Storage Temperature Range TJ ,TSTG -55～+150 Unit V V A A mJ W ℃ ■Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Thermal Resistance Junction-to-Ambient D t≤10S Steady-State Symbol RθJA Typ Max Units 15 20 40 50 ℃/W Thermal Resistance Junction-to-Case Steady-State RθJC 1.35 1.7 ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking YJG25GP10A F1 YJG25GP10A MINIMUM PACKAGE(pcs) 5000 INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 10000 100000 13“ reel S-E133 Rev.3.3,12-Oct-20 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
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YJG25GP10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -100 V Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage IDSS IGSS VGS(th) VDS=-100V,VGS=0V TJ=25℃ TJ=55℃ VGS= ±20V, VDS=0V VDS= VGS, ID=-250μA -1 μA -5 ±100 nA -1.0 -1.8 -2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= -10V, ID=-15A VGS= -4.5V, ID=-7A 38 48 mΩ 43 55 Diode Forward Voltage VSD IS=-15A,VGS=0V -1.3 V Maximum Body-Diode Continuous
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