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YJH03N10A - N-Channel Enhancement Mode Field Effect Transistor

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Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Dr

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Part number YJH03N10A
Manufacturer Yangzhou Yangjie
File Size 422.16 KB
Description N-Channel Enhancement Mode Field Effect Transistor
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    YJH03N10A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
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