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GuangDong Yuejing High Technology CO.,LTD.
■■APPLICATION：High-Gain Amplifier.
C2062
—NPN silicon —
■■MAXIMUM RATING（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC 300 mA
Collector Power Dissipation
PC 300 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150 ℃
■■ ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
10K
VCE= 3 V，Ic=100 mA
Collector Cut-off Current
ICBO
0.1 µA VCB= 30 V，IE=0
Emitter Cut-off Current
IEBO
0.1 µA VEB= 10 V，Ic=0
Collector-Base Breakdown Voltage BVCBO 40
V Ic= 0.
C2062 Datasheet