Datasheet Summary
GuangDong Yuejing High Technology CO.,LTD.
- - APPLICATION：High-Gain Amplifier.
- NPN silicon
- -
- MAXIMUM RATING（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC 300 mA
Collector Power Dissipation
PC 300 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150 ℃
- - ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION mon Emitter DC Current Gain hFE
10K
VCE= 3 V，Ic=100 mA
Collector Cut-off Current
ICBO
0.1 µA VCB= 30...
