ZN65C1R070L Description
The ZN65C1R070L is a 650V, 70 mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package. It is a normally-off device that bines ZienerTech’s latest high-voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
ZN65C1R070L Key Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Wide gate safety margin
- Capable of reverse conduction
- Low gate charge
- RoHS pliant and Halogen-free packaging
- Achieves increased efficiency in both hard- and soft- switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost