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ZN65C1R070L - 650V GaN FET

Description

The ZN65C1R070L is a 650V, 70 mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package.

It is a normally-off device that combines ZienerTech’s latest high-voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

2.

Features

  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Wide gate safety margin.
  • Capable of reverse conduction.
  • Low gate charge.
  • RoHS compliant and Halogen-free packaging.
  • Achieves increased efficiency in both hard- and soft- switched circuits - Increased power density - Reduced system size and weight - Overall lower system cost.
  • Easy to drive with commonly-used gate drivers 3.

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Datasheet Details

Part number ZN65C1R070L
Manufacturer ZIENER
File Size 1.10 MB
Description 650V GaN FET
Datasheet download datasheet ZN65C1R070L Datasheet
Additional preview pages of the ZN65C1R070L datasheet.

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    ZN65C1R070L Preliminary Datasheet 650V, 70mΩ typ., GaN FET in DFN 8x8 Package 1. General Description The ZN65C1R070L is a 650V, 70 mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package. It is a normally-off device that combines ZienerTech’s latest high-voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. 2. Features and Benefits  JEDEC-qualified GaN technology  Dynamic RDS(on)eff production tested  Wide gate safety margin  Capable of reverse conduction  Low gate charge  RoHS compliant and Halogen-free packaging  Achieves increased efficiency in both hard- and soft- switched circuits - Increased power density - Reduced system size and weight - Overall lower system cost  Easy to drive with commonly-used gate drivers 3.
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