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U630H04 - Hardstore 512x8 Nvsram

General Description

F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation (STORE Cycle Time < 10 ms) F Automatic STORE Timing F 10 STORE cycles to EEPROM F 10 years data retention

Key Features

  • F Packages:.

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Datasheet Details

Part number U630H04
Manufacturer ZMD
File Size 248.66 KB
Description Hardstore 512x8 Nvsram
Datasheet download datasheet U630H04 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary U630H04 HardStore 512 x 8 nvSRAM Features F Packages: Description F High-performance CMOS nonvolatile static RAM 512 x 8 bits F 25 and 45 ns Access Times F 12 and 25 ns Output Enable Access Times F Unlimited Read and Write to SRAM F Hardware STORE Initiation (STORE Cycle Time < 10 ms) F Automatic STORE Timing F 10 STORE cycles to EEPROM F 10 years data retention in EEPROM F Automatic RECALL on Power Up F Hardware RECALL Initiation www.DataSheet4U.com (RECALL Cycle Time < 20 µs) F Unlimited RECALL cycles from EEPROM F Single 5 V ± 10 % Operation F Operating temperature ranges: 5 PDIP28 (300 mil) PDIP28 (600 mil) SOP28 (300 mil) F F 0 to 70 °C -40 to 85 °C CECC 90000 Quality Standard ESD characterization according MIL STD 883C M3015.