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ZMC88212U - Dual DIE Power MOSFET

Description

with a low resistance package to provide extremely low RDS(ON).

It combines one N Channel MOSFET and one P channel MOSFET.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Dual DIE in one package.

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Datasheet Details

Part number ZMC88212U
Manufacturer ZMJ SEMICONDUCTOR
File Size 411.70 KB
Description Dual DIE Power MOSFET
Datasheet download datasheet ZMC88212U Datasheet

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Full PDF Text Transcription (Reference)

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ZMJ SEMICONDUCTOR CO., LTD ● General Description It combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). It combines one N Channel MOSFET and one P channel MOSFET. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Dual DIE in one package ●Application ■ Power Management in Notebook Computer ■ BLDC Motor driver ●Ordering Information: Part NO.
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