ZM027N03D Datasheet | ZMJ

Description The ZM027N03D bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. - Features - Advance high cell density Trench technology - Low RDS(ON) to minimize conductive loss - Low Gate Charge for fast switching - Low Thermal resistance - Application - MB/VGA Vcore - SMPS 2nd Synchronous Rectifier - POL application - BLDC Motor driver - Ordering Information: Part NO. Marking Packing Information Basic ordering unit (pcs) 30V N-Channel Power MOSFET - Product Summary VDS =30V RDS(ON) =2.7mΩ ID =95A DS G TO-252 ZM027N03 REEL TAPE 2500 - Absolute Maximum Ratings（TC =25℃） Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current① Total Power Dissipation Total Power Dissipation Operating Junction Temperature Storage Temperature Single Pulse Avalanche Energy Avalanche Current Rev. A - June, 2020 Symbol VDS VGS ID@TC=25℃ ID@TC=75℃ ID @TC=100℃ PD@TC=25℃ PD@TA=25℃ TJ TSTG EAS IAS IAR Rating Unit ±20 -55 to...