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ZMD68110S - 100V Dual N-Channel Power MOSFET

Description

with a low resistance package to provide extremely low RDS(ON).

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number ZMD68110S
Manufacturer ZMJ
File Size 408.14 KB
Description 100V Dual N-Channel Power MOSFET
Datasheet download datasheet ZMD68110S Datasheet
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ZMJ SEMICONDUCTOR CO., LTD ZMD68110S 100V Dual N-Channel Power MOSFET ● General Description It combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). ● Features ■ Advance high cell density Trench technology ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■SMPS 2nd Synchronous Rectifier ■BLDC Motor driver ● Product Summary VDS1 =100V VDS2 =100V RDS(ON) 1=10mΩ RDS(ON) 2=10mΩ ID1 =12A ID2 =12A ●Ordering Information: Part NO.
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