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CJ3401 Datasheet PDF

ZPSEMI CJ3401

P-Channel Enhancement Mode MOSFET

Part No. CJ3401
Datasheet CJ3401 Download
Manufacturer ZPSEMI
Description P-Channel Enhancement Mode MOSFET
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CJ3401 datasheet page 1 preview

APPLICATIONS

SOT-23
● Power Management Portable Equipment and Battery Powered Systems.

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous TA=25℃ Unless Otherwise noted Symbol VDS VGS ID

ELECTRICAL CHARACTERISTICS

Parameter Off Characteristics Drain to Source Breakdown Voltage TA=25℃ Unless Otherwise noted Symbol Test Conditions BVDSS VGS=0V, ID=-250μA Zero-Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V On Characteristics Gate Threshold Voltage VGS(th) VGS= VDS, ID=-250µA Static Drain-source On-Resistance RD
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