ZPSEMI CJ3401
P-Channel Enhancement Mode MOSFET
APPLICATIONS
SOT-23● Power Management Portable Equipment and Battery Powered Systems.
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous TA=25℃ Unless Otherwise noted Symbol VDS VGS IDELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Drain to Source Breakdown Voltage TA=25℃ Unless Otherwise noted Symbol Test Conditions BVDSS VGS=0V, ID=-250μA Zero-Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse IGSSF IGSSR VGS=12V, VDS=0V VGS=-12V, VDS=0V On Characteristics Gate Threshold Voltage VGS(th) VGS= VDS, ID=-250µA Static Drain-source On-Resistance RD