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CJD02N65 Datasheet PDF

ZPSEMI CJD02N65

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time.
Part No. CJD02N65
Datasheet CJD02N65 Download
Manufacturer ZPSEMI
Description N-Channel Power MOSFET
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CJD02N65 datasheet page 1 preview

GENERAL DESCRIPTION

Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol
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