MA5104 - RADIATION HARD 4096 x 1 BIT STATIC RAM

Datasheet Summary

Features

s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU.

Zarlink Semiconductor

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Datasheet Details

Part number	MA5104
Manufacturer	Zarlink Semiconductor
File Size	286.88 KB
Description	RADIATION HARD 4096 x 1 BIT STATIC RAM
Datasheet	MA5104 Datasheet
Additional preview pages of the MA5104 datasheet.

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www.DataSheet4U.com Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.

Published: Apr 5, 2007 |