A3R12E40CBF Overview
Revision 1.2 Sep., 2013 A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM Specifications Density: VDD, VDDQ = 1.8V ± 0.1V Data rate: 1066Mbps/800Mbps(max.) 1KB page size (A3R12E30CBF) ⎯ Row address:.
A3R12E40CBF Key Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Data mask (DM) for write data
- On-Die-Termination for better signal quality
- Programmable RDQS, /RDQS output for making × 8