• Part: A3R12E40CBF
  • Manufacturer: Zentel
  • Size: 1.42 MB
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A3R12E40CBF Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
  • Differential clock inputs (CK and /CK)
  • DLL aligns DQ and DQS transitions with CK
  • mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
  • Data mask (DM) for write data
  • On-Die-Termination for better signal quality
  • Programmable RDQS, /RDQS output for making × 8

A3R12E40CBF Description

Revision 1.2 Sep., 2013 A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM Specifications Density: VDD, VDDQ = 1.8V ± 0.1V Data rate: 1066Mbps/800Mbps(max.) 1KB page size (A3R12E30CBF) ⎯ Row address:.