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A3R1GE4EGF Datasheet 1Gb DDRII SDRAM

Manufacturer: Zentel

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Overview

A3R1GE4EGF 1Gb DDRII Synchronous DRAM 1Gb DDRII SDRAM Specification A3R1GE4EGF Zentel Electronics Corp.

Revision 1.0 Apr., 2010 Specifications • Density: 1G bits • Organization ⎯ 8M words × 16 bits × 8 banks (A3R1GE4EGF) • Package ⎯ 84-ball FBGA(μBGA) (A3R1GE4EGF) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.) ⎯ 800Μbps/667Mbps(max) • 2KB page size (A3R1GE4EGF) ⎯ Row address: A0 to A12 ⎯ Column address: A0 to A9 • Eight internal banks for concurrent operation • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • Burst type (BT): ⎯ Sequential (4, 8) ⎯ Interleave (4, 8) • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Driver strength: normal/weak • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms ⎯ Average refresh period 7.8μs at 0°C ≤ TC ≤ +85°C 3.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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