A3R1GE4EGF Overview
A3R1GE4EGF 1Gb DDRII Synchronous DRAM 1Gb DDRII SDRAM Specification A3R1GE4EGF Zentel Electronics Corp. Revision 1.0 Apr., 2010 Specifications Density: VDD, VDDQ = 1.8V ± 0.1V Data rate:.
A3R1GE4EGF Key Features
- Double-data-rate architecture; two data transfers per clock cycle
- The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
- Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
- DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
- Differential clock inputs (CK and /CK)
- DLL aligns DQ and DQS transitions with CK
- mands entered on each positive CK edge; data and
- Data mask (DM) for write data
- Off-Chip-Driver Impedance Adjustment and On-Die
- Programmable RDQS, /RDQS output for making × 8