• Part: A3R1GE4EGF
  • Manufacturer: Zentel
  • Size: 1.64 MB
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A3R1GE4EGF Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the recei
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
  • Differential clock inputs (CK and /CK)
  • DLL aligns DQ and DQS transitions with CK
  • mands entered on each positive CK edge; data and
  • Data mask (DM) for write data
  • Off-Chip-Driver Impedance Adjustment and On-Die
  • Programmable RDQS, /RDQS output for making × 8

A3R1GE4EGF Description

A3R1GE4EGF 1Gb DDRII Synchronous DRAM 1Gb DDRII SDRAM Specification A3R1GE4EGF Zentel Electronics Corp. Revision 1.0 Apr., 2010 Specifications Density: VDD, VDDQ = 1.8V ± 0.1V Data rate:.