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A3R56E40ABF Datasheet 256Mb DDRII Synchronous DRAM

Manufacturer: Zentel

Overview: A3R56E40ABF 256Mb DDRII Synchronous DRAM 256Mb DDRII SDRAM Specification A3R56E40ABF Zentel Electronics Corp. Revision 1.2 Dec., 2012 A3R56E40ABF 256Mb DDRII Synchronous DRAM Specifications • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks (A3R56E40ABF) • Package ⎯ 84-ball FBGA(μBGA) (A3R56E40ABF) ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 1066Mbps/800Mbps(max.) • 1KB page size (A3R56E40ABF) ⎯ Row address: A0 to A12 ⎯ Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • Burst type (BT): ⎯ Sequential (4, 8) ⎯ Interleave (4, 8) • /CAS Latency (CL): 3, 4, 5, 6, 7 • Precharge: auto precharge option for each burst access • Driver strength: normal/weak • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms ⎯ Average refresh period 7.8μs at 0°C ≤ TC ≤ +85°C 3.

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Datasheet Details

Part number A3R56E40ABF
Manufacturer Zentel
File Size 1.53 MB
Description 256Mb DDRII Synchronous DRAM
Download A3R56E40ABF Download (PDF)

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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