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2N6717 - NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

Key Features

  • 100 Volt VCEO.
  • Gain of 20 at IC = 0.5 Amp.
  • Ptot=1 Watt 2N6716 2N6717 2N6718 C B E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1 E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).