Other Datasheets by Zetex (now Diodes Incorporated)
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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW
BC639
E C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 80 80 5 1 800 -55 to +150
TO92 UNIT V V V A mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 80 80 5 0.1 0.5 1.0 25 40 25 200 TYP. MAX. UNIT V V V
µA
CONDITIONS.