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BC639 - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Key Features

  • 1 Amp continuous current.
  • Ptot= 800 mW BC639 E C B.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW BC639 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 80 80 5 1 800 -55 to +150 TO92 UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. 80 80 5 0.1 0.5 1.0 25 40 25 200 TYP. MAX. UNIT V V V µA CONDITIONS.