BS250P - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Datasheet Summary

Features

45 Volt VDS.
RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS.

Zetex Semiconductors

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Datasheet Details

Part number	BS250P
Manufacturer	Zetex Semiconductors
File Size	48.88 KB
Description	P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Datasheet	BS250P Datasheet
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Other Datasheets by Zetex Semiconductors

BS250F - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID I DM VGS Ptot Tj:Tstg -45 E-Line TO92 Compatible VALUE UNIT V mA A V mW °C -230 -3 ±20 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSS IDSS MIN. -45 -1 -3.5 -20 -500 14 150 TYP. MAX. UNIT V V nA nA Ω CONDITIONS.

Published: Mar 23, 2005 |