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BS250P - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 45 Volt VDS.
  • RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS.

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Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
BS250F P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS(on)=14Ω BS250P D G S REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID I DM VGS Ptot Tj:Tstg -45 E-Line TO92 Compatible VALUE UNIT V mA A V mW °C -230 -3 ±20 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(th) IGSS IDSS MIN. -45 -1 -3.5 -20 -500 14 150 TYP. MAX. UNIT V V nA nA Ω CONDITIONS.