SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST40 BT1 7
BST15
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -200 -200 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).