BST82
SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I
I Issue 2
- October 1997 PARTMARKING DETAIL
- O2
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SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp ≤ 2ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 ± 20 300 -55 to +150 UNIT V V m A m A V m W °C
ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain Source Breakdown Voltage Gate Source Threshold Voltage Gate Body Leakage Emitter Cut-Off Current Static Drain-Source On-state Resistance Transfer Admittance Input Capacitance (2) SYMBOL B VDSS V GS(th) I GSS I DSS R DS(on) | yfs | C iss 7 150 15 13 3 4 4 30 20 6 10 10 MIN. 80 1.5 3.5 100 1 10 TYP. MAX. UNIT V V n A µA Ω m S p F p F p F ns ns I D=175m A, V DD=50V V GS=0 to 10V V DS=10V, V GS=0V f=1MHz CONDITIONS....
