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SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I
I Issue 2 - October 1997 PARTMARKING DETAIL – O2
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BST82
C B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain Source Voltage Drain Source Voltage (non repetitive peak tp ≤ 2ms) Continuous Drain Current at T amb=25°C Drain Current Peak Gate-Source Voltage Max Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS V DS(sm) ID I DM V GS PD T j :T stg VALUE 80 100 175 600 ± 20 300 -55 to +150 UNIT V V mA mA V mW °C
ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
BST82 Datasheet
