PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
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SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
ISSSUE 1 - MAY 1999 FEATURES
FCX717
*
* * * *
2W POWER DISSIPATION
10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 77m at 3A
Partmarking Detail -
717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -12 -12 -5 -10 -3 -500 1 † 2 ‡ -55 to +150 UNIT V V V A A mA W W °C
† recommended Ptot calculated using FR4 measuring 15x15x0.