FLLD258 Datasheet | Zetex Semiconductors

SOT23 SILICON PLANAR LOW LEAKAGE MON CATHODE DIODE PAIR ISSUE 2 – SEPTEMBER 1995 7 1 3 SOT23 PART MARKING DETAIL – D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive Peak Reverse Voltage Average Rectified Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VRRM IF(AV) Ptot Tj:Tstg VALUE 100 250 3.0 330 -55 to +150 UNIT V m A A m W °C Non-Repetitive Peak Forward Current (t=1µ s) IFSM ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Current Reverse Recovery Time- Forward Recovery Time Diode Capacitance SYMBOL IR trr tfr Cd MIN. MAX. 3 5 400 10 4 Typ 0.9 1.4 UNIT CONDITIONS. µA n A VRRM=50V VRRM=100V, Tamb=150°C IF= IR=50 – 400m A IF=10m A VR=1V, f=1MHz IF=10m A, Rise time=5ns ± 20% IF=-200m A ns ns p F V V Forward Overshoot Voltage Vfr Forward Voltage VF - Time for IR to recover to 10% of IR peak For typical characteristics graphs see FLLD263 datasheet. - 96 FLLD258 FLLD261 FLLD263 TYPICAL CHARACTERISTICS 25 20 15 10 5 0 0 20 40 60 80 VF - Forward Voltage (V) 100 IR v VF -...