FMMT494
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3
- NOVEMBER 1995 PARTMARKING DETAIL 7 494
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) h FE 100 100 60 20 100 10 MIN. 140 120 5 100 100 100 0.2 0.3 1.1 1.0 300 MHz p F SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg MAX. VALUE 140 120 5 1 2 200 500 -55 to +150 UNIT V V V n A n A n A V V V V UNIT V V V A A m A m W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
CONDITIONS. IC=100µA IC=10m A-...
