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SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 5 - JANUARY 1997 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE 589 FMMT489
FMMT589
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -50 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -100 -100 -100 -0.25 -0.35 -0.65 -1.2 -1.1 100 100 80 40 100 15 300 MHz pF nA nA nA V V V V V CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-30V VCES=-30V VEB=-4V IC=-0.
FMMT589 Datasheet
