FMMT589 Datasheet | Zetex Semiconductors

FEATURES - Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS PLEMENTARY TYPE 589 FMMT489 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX. VALUE -50 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -100 -100 -100 -0.25 -0.35 -0.65 -1.2 -1.1 100 100 80 40 100 15 300 MHz p F n A n A n A V V V V V CONDITIONS. IC=-100µ A IC=-10m A- IE=-100µ A VCB=-30V VCES=-30V VEB=-4V IC=-0.5A, IB=-50m A- IC=-1A, IB=-100m A- IC=-2A, IB=-200m A- IC=-1A, IB=-100m A- IC=-1A, VCE=-2V- IC=-1m A, VCE=-2V- IC=-500m A, VCE=-2V- IC=-1A, VCE=-2V- IC=-2A, VCE=-2V- IC=-100m A, VCE=-5V f=100MHz VCB=-10V, f=1MHz UNIT V V V A A m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). SYMBOL MIN. V(BR)CBO V(BR)CEO -50 -30 -5 Collector-Base Breakdown Voltage...