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FMMT6517 - NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features

  • 350 Volt VCEO.
  • Gain of 15 at IC=100mA 7 FMMT6517 E C B.

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SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 7 FMMT6517 E C B APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE PARTMARKING DETAIL FMMT6520 517 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) MIN. 350 350 5 50 50 0.3 0.35 0.5 1.0 0.80 0.85 0.90 2.
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