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FMMT6520 - PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features

  • 350 Volt VCEO.
  • Gain of 15 at IC=-100mA 7 FMMT6520 E C B.

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Full PDF Text Transcription

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SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - NOVEMBER 1995 FEATURES * 350 Volt VCEO * Gain of 15 at IC=-100mA 7 FMMT6520 E C B APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL – 520 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) MIN. -350 -350 -5 -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.90 -2.
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