FMMTA42 Datasheet | Zetex Semiconductors

SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 4 - MARCH 2001 ✪ 3E 7E PARTMARKING DETAIL - FMMTA42 - FMMTA42R - FMMTA42 PLEMENTARY TYPES - FMMTA42 - FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j :T stg FMMTA42 300 300 5 200 330 -55 to +150 UNIT V V V m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 40 50 6 MIN. 300 300 6 0.1 0.1 0.1 0.1 0.5 0.9 25 40 50 50 8 0.4 0.9 MAX. MIN. 200 200 6 MAX. UNIT V V V CONDITIONS. I C=100 µ A, I E=0 I C=1m A, I B=0- I E=100 µ A, I C=0 V CB=200V, I E=0 V CB=160V, I E=0 V EB=6V, I C=0 V EB=4V, I C=0 I C=20m A, I B=2m A- I C=20m A, I B=2m A- I C=1m A, V CE=10V- I C=10m A, V CE=10V- I C=30m A, V CE=10V- MHz p F I C=10m A, V CE=20V f=20MHz V CB=20V, f=1MHz µA µA µA µA 200 f T C obo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle...