FMMTA92 Datasheet | Zetex Semiconductors

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 ✪ PARTMARKING DETAILS: - FMMTA92 - 4E - FMMTA92R - 8E PLEMENTARY TYPES: - FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j :T stg FMMTA92 -300 -300 -5 -200 330 -55 to +150 UNIT V V V m A m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA92 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 25 50 6 MHz p F MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 MAX. UNIT V V V CONDITIONS. I C=-100 µ A, I E=0 I C=-1m A, I B=0- I E=-100 µ A, I C=0 V CB=-200V, I E=0 V CB=-160V, I E=0V EB=-3V, I E=0 I C=-20m A, I B=-2m A- I C=-20m A, I B=-2m A- I C=-1m A, V CE=10V- I C=-10m A, V CE=10V- I C=-30m A,V CE=-10V- I C=-10m A, V CE=-20V f=20MHz V CB=-20V, f=1MHz µA µA µA V V f T C obo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TYPICAL CHARACTERISTICS h FE Static Forward Current Transfer Ratio 60 f T Transition Frequency (MHz) 170 150 130 110 90 70 50 30 0.1 1.0 10 100 VCE=20V VCE=10V 40 0.1 1.0 10 100 IC-Collector Current (m A) IC-Collector Current (m A) h FE v IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) f T vs IC IC / IB=10 0 1.0 10 100 IC-Collector Current (m A) VCE(sat) vs...