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FMMTH10 - NPN SILICON PLANAR RF TRANSISTOR

Features

  • High fT=650MHz.
  • Maximum capacitance 0.7pF.
  • Low noise < 5dB at 500MHz FMMTH10 E C B.

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Full PDF Text Transcription

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SOT23 NPN SILICON PLANAR RF TRANSISTOR ISSUE 2 – NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz FMMTH10 E C B PARTMARKING DETAIL – 3EZ SOT23 SYMBOL VCES VCEO VEBO IC ICM Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.5 Typ. 0.45 0.65 0.95 60 650 0.7 9 Typ. 3 5 MHz pF ps dB nA nA V pF V VALUE 30 25 3 25 50 330 -55 to +150 CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4mA, IB=0.4mA VCB=10V, IE=0 f=1MHz IC=4mA, VCE=10V IC=4mA, VCE=10V* IC=4mA, VCE=10V, f=100MHz VCB=10V, IE=0, f=1MHz IC=4mA, VCB=10V, f=31.8MHz IC=2mA, VCE=5V f=500MHz, UNIT V V V mA mA mW °C ABSOLUTE MAXIMUM RATINGS.
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