FMMTH10 Datasheet | Zetex Semiconductors

FEATURES - High f T=650MHz - Maximum capacitance 0.7p F - Low noise < 5d B at 500MHz PARTMARKING DETAIL – 3EZ SOT23 SYMBOL VCES VCEO VEBO IC ICM Ptot Tj:Tstg MAX. UNIT V V V 100 100 0.5 Typ. 0.45 0.65 0.95 60 650 0.7 9 Typ. 3 5 MHz p F ps d B n A n A V p F V VALUE 30 25 3 25 50 330 -55 to +150 CONDITIONS. IC=100µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4m A, IB=0.4m A VCB=10V, IE=0 f=1MHz IC=4m A, VCE=10V IC=4m A, VCE=10V- IC=4m A, VCE=10V, f=100MHz VCB=10V, IE=0, f=1MHz IC=4m A, VCB=10V, f=31.8MHz IC=2m A, VCE=5V f=500MHz, UNIT V V V m A m A m W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN. 30 25 3 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) Collector-Emitter Saturation VCE(sat) Voltage mon Base Feedback Capacitance Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Crb VBE(on) h FE f T Collector Base Capacitance Ccb Collector Base Time Constant rb Cc Noise Figure Nf - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 181 TYPICAL CHARACTERISTICS 200 175°C 150 0.8 V+-=-10V 1.0 V+-=-10V -55°C - (Volts) -Gain 100°C 100 25°C 0.6 0.4 25°C 100°C 175°C h -55°C 0.2 - (m A) - (m A) h FE v IC VBE(on)v IC V+-=10V f=100MHz 1.2 1.0 0.8 f - (MHz) - (p F) C 0.1 1 10 100 500 0 0.6 0.4 0.2 0 - (m...