Datasheet4U Logo Datasheet4U.com

FMMTL717 - PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Features

  • Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMMTL717 PNP HIGH GAIN MEDIUM POWER TRANSISTOR Diodes
FMMTL717 Medium Power Transistor Kexin
FMMTL718 PNP SILICON LOW SATURATION TRANSISTOR Diodes
FMMTL718 Medium Power Transistor Kexin
FMMTL619 NPN SILICON LOW SATURATION TRANSISTOR Diodes

Other Datasheets by Zetex (Diodes Incorporated)

Part Number Description
FMMTL718 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
FMMTL618 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
FMMTL619 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
FMMT38 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FMMT38A NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Full PDF Text Transcription

Click to expand full text
SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – PARTMARKING DETAIL – FMMTL617 L77 FMMTL717 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg VALUE -12 -12 -5 -1.25 -4 -200 -500 -55 to +150 UNIT V V V A A mA mW °C FMMTL717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. -12 -12 -5 TYP.
Published: |