Datasheet4U Logo Datasheet4U.com

FXT38C - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Key Features

  • 60 Volt VCEO.
  • Gain of 10K at IC=0.5 Amp www. DataSheet4U. com FXT38C B C E REFER TO BCX38 FOR GRAPHS.

📥 Download Datasheet

Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
FXT2907A PNP SILICON PLANAR SWITCHING TRANSISTOR
FXT449 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT450 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT451 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT453 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT455 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT458 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT549 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT550 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
FXT553 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp www.DataSheet4U.com FXT38C B C E REFER TO BCX38 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg 80 60 10 2 E-Line TO92 Compatible VALUE UNIT V V V A mA W °C 800 1 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 80 60 10 100 100 1.25 1.