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FXT458 - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Key Features

  • 400 Volt VCEO.
  • 0.5 Amp continuous current.
  • Ptot= 1 Watt FXT458 B C E REFER TO ZTX458 FOR GRAPHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – SEPTEMBER 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt FXT458 B C E REFER TO ZTX458 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 100 15 50 5 MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 300 MHz pF SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 Compatible VALUE 400 400 5 300 1 -55 to +200 UNIT V V V nA nA nA V V V V CONDITIONS.