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FXT755 - PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Key Features

  • 150 Volt VCEO.
  • 1 Amp continuous current.
  • Low saturation voltage.
  • Ptot= 1 Watt FXT755 B C E REFER TO ZTX755 FOR GRAPHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt FXT755 B C E REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -150 -150 -5 -2 -1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -150 -150 -5 -100 -100 -0.5 -0.5 -1.1 -1.0 50 50 20 30 20 TYP.