• Part: FZT1051A
  • Description: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Zetex Semiconductors
  • Size: 45.42 KB
Download FZT1051A Datasheet PDF
Zetex Semiconductors
FZT1051A
FEATURES - VCEO = 40V - 5 Amp Continuous Current - 20 Amp Pulse Current - Low Saturation Voltage - High Gain - Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C † Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 150 40 5 10 5 500 2.5 -55 to +150 UNIT V V V A A m A W °C † The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 IC=100µA Collector-Emitter Breakdown Voltage VCES 150 190 IC=100µA - Collector-Emitter Breakdown...