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SOT23 SILICON VARIABLE CAPACITANCE DIODES
ISSUE 5 – JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V)
ZC830/A/B to ZC836/A/B
1
1 3 2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Forward Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg MAX 200 330
SOT23
UNIT mA mW °C
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb =25°C)
PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Temperature Coefficient of Capacitance SYMBOL VBR IR MIN 25 0.2 0.03 10 0.
ZC835A Datasheet
