• Part: ZDC834A
  • Description: SILICON DUAL VARIABLE CAPACITANCE DIODE
  • Category: Diode
  • Manufacturer: Zetex Semiconductors
  • Size: 126.95 KB
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Zetex Semiconductors
ZDC834A
ZDC834A is SILICON DUAL VARIABLE CAPACITANCE DIODE manufactured by Zetex Semiconductors.
DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual mon cathode varactor diode , offering users both pact circuit design and impressive performance prising tightly controlled CV characteristics, a capacitance of typically 47 pf @ 2V,excellent phase noise performance and high Q of 200 min. This superior performance in the VHF and UHF ranges has been optimised to meet the high filtering requirements of a wide range of Digital Audio Broadcasting (DAB) module circuits , mobile radios, pagers, voltage controlled crystal oscillators (VCXO) and temperature controlled crystal oscillators (TCXO). FEATURES SOT23 PIN CONFIGURATION - mon Cathode dual Diode ( monolithic construction ) - VHF- UHF operation - Close tolerance CV characteristics - High Tuning Ratio - Low IR , enabling excellent Phase Noise Performance - High Q ( IR typically < 200p A @ 20V ) 2 3 APPLICATIONS - DAB Receiver Modules for use with: - Low voltage battery portables - Hi-Fi - In car radio - MP3 players C1 C2 A1 - Voltage and Temperature Controlled Crystal Oscillators - Mobile Radio and Pagers. ORDERING INFORMATION DEVICE ZDC834ATA REEL SIZE (inches) 7 TAPE WIDTH (mm) 8mm embossed QUANTITY PER REEL 3000 units Top View A2 DEVICE MARKING - C5A ISSUE 3 - APRIL 2001 1 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current (single diode) Power Dissipation at T amb =25°C (a) Linear Derating Factor Operating and Storage Temperature Range SYMBOL IF PD T j :T stg VALUE 200 330 3 -55 to +150 UNIT m A m W m W/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R θ JA VALUE 417 UNIT °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ). PARAMETER Reverse Breakdown Voltage Reverse Leakage Current Temperature Coefficient Diode Capacitance Capacitance Ratio Figure of Merit SYMBOL V BR MIN. 25 TYP. MAX. UNIT V CONDITIONS. I R = 10 µA V R = 20V V R...