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ZHCS1006 - SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT

Datasheet Summary

Features

  • High current capability.
  • Low V F.

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Datasheet preview – ZHCS1006

Datasheet Details

Part number ZHCS1006
Manufacturer Zetex Semiconductors
File Size 160.49 KB
Description SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
Datasheet download datasheet ZHCS1006 Datasheet
Additional preview pages of the ZHCS1006 datasheet.

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Full PDF Text Transcription

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SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 1 - NOVEMBER 1997 7 1 ZHCS1006 C 1 A 3 FEATURES: • High current capability • Low V F APPLICATIONS: • Mobile telecomms, PCMIA & SCSI • DC-DC Conversion PARTMARKING DETAILS : S16 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ IF = 1000mA(typ) Average Peak Forward Current;D.C.= 50% Non Repetitive Forward Current t ≤100 µs t≤10ms Power Dissipation at Tamb= 25° C Storage Temperature Range Junction Temperature SYMBOL VR IF VF IFAV IFSM Ptot Tstg Tj VALUE 60 900 600 1600 12 5 500 -55 to + 150 125 SOT23 UNIT V mA mV mA A A mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
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