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ZNBG2000X10 - FET BIAS CONTROLLER

General Description

The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc.

with a minimum of external components.

Key Features

  • Provides bias for GaAs and HEMT FETs.
  • Drives up to two FETs.
  • Dynamic FET protection.
  • Drain current set by external resistor.
  • Regulated negative rail generator requires only 2 external capacitors.

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Full PDF Text Transcription for ZNBG2000X10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ZNBG2000X10. For precise diagrams, and layout, please refer to the original PDF.

ZNBG2000 ZNBG2001 FET BIAS CONTROLLER DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in sate...

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meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. With the addition of two capacitors and a resistor the devices provide drain voltage and current control for 2 external grounded source FETs, generating the regulated negative rail required for FET gate biasing whilst operating from a single supply. This negative bias, at -3 volts, can also be used to supply other external circuits. The ZNBG2000/1 contains two bias stages. A single resistor allows FET drain current to be set to the desired level.

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